BUDF. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS) = V (Min). ·High Switching Speed. ·Built-in Damper Diode. APPLICATIONS. BUDF. DESCRIPTION. ·With TO-3PFa package. ·High voltage,high speed. · Built-in damper diode. APPLICATIONS. ·For use in horizontal deflection circuits. BUDF datasheet, BUDF circuit, BUDF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.
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Refer to mounting instructions for F-pack envelopes. Silicon diffused power transistor buaf datasheet catalog. Exposure to limiting values for extended periods may affect device reliability.
Npn daasheet diffused buaf planar silicon transistor color tv horizontal output applicationsno damper diode to3pml. Forward bias safe operating area.
July 2 Rev 1. Buaf datasheet, buaf npn highvoltage transistor datasheet, buy buaf transistor. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. Dtaasheet data sheet contains final product specifications.
SOT; The seating plane is electrically isolated from all terminals. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Application information Where application information is given, it is advisory and does not form part of the specification. High collectorbase voltagevcbov high speed switching.
The information presented in this document does not form part of any dtaasheet or contract, it is believed to be accurate and reliable and bu2508ef be changed without notice. II Extension for repetitive pulse operation.
Silicon diffused power transistor online from elcodis, view and download budf pdf datasheet, diodes, rectifiers specifications. Typical collector-emitter saturation voltage.
Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. Silicon diffused power transistor buaf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor in a plastic fullpack. Buaf transistor equivalent substitute crossreference search. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.
Typical collector storage and fall time. July 7 Rev 1.
July 6 Rev 1. Philips silicon diffused power transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.
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C I Region of permissible DC operation. Buaf datasheet, bj2508df pdf, buaf data sheet, buaf manual, buaf pdf, buaf, datenblatt, electronics buaf, alldatasheet, free, datasheet.
Stress above one or more of the limiting values may cause permanent damage to the device. Budf transistor equivalent substitute crossreference search. C 1 Turn-off current.
BUDF NTE Equivalent NTE NPN horizontal defle – Wholesale Electronics
This data sheet contains target or goal specifications for product development. Fatasheet specification This data sheet contains preliminary data; supplementary data may be published later. No liability will be accepted by the publisher for any consequence of its use. Typical base-emitter saturation voltage. Philips semiconductors product specification silicon diffused power transistor budf general description enhanced performance, new generation, bu258df, highspeed switching npn transistor with an integrated damper diode in a plastic fullpack envelope.
July 5 Rev 1. July 1 Rev 1. Typical DC current gain.