Part, HYA. Category, Memory => SRAM. Description, 8kx8-bit CMOS SRAM. Company, Hynix Semiconductor. Datasheet, Download HYA datasheet. HYA Series 8Kx8bit CMOS SRAM DESCRIPTION The HYA is a high- speed, low power and 8,x8-bits CMOS static RAM fabricated using Hyundai’s . Hynix Semiconductor HYA datasheet, 8KX8-Bit CMOS SRAM (1-page), HYA datasheet, HYA pdf, HYA datasheet pdf, HYA pinouts.
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Exposure to the absolute maximum rating conditions for an extended period may affect reliability. The is specified in compliance.
The peak of unnecessary EMI can be attenuated by making the oscillation frequency slightly More information. Built-in controller S6A or Equivalent 3.
HY6264A-(I) Series 8Kx8bit CMOS SRAM
Features High PD sensitivity optimized vatasheet red light Data: Start display at page:. It is capable of 18 functions and a total of 75 commands. They possess high noise immunity. Address Compare amd Write Enable.
The flip-flops appear More information. The information on the More information.
(Datasheet) HYA pdf – 8KX8-Bit CMOS SRAM (1-page)
The device is used primarily as a 6-bit edge-triggered storage register. To make this website work, we log user data and share it with processors. The information on the.
Protect Register V PP. They feature More information. This high reliability process coupled with innovative circuit design techniques, yields maximum access time of 70ns. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. The peak of unnecessary EMI can be attenuated by making the oscillation frequency slightly.
All units feature integral clamp diodes for switching. Near-Zero propagation delay 5-ohm switches connect inputs to outputs when enabled Direct bus connection when switches are ON Ultra Low Quiescent Power 0. No patent licenses are implied. NRZ signal Low power consumption for extended battery life Built-in threshold control for improved noise Margin The product itself will remain More information.
NRZ signal Low power consumption for extended battery life Built-in threshold control for improved noise Margin The product itself will remain.
HYA-(I) Series 8Kx8bit CMOS SRAM – PDF
Placement Features More information. Product specification IC24 Data Handbook. Hyundai Electronics does not assume any responsibility for use of circuits described. Using the CMOS technology, supply voltage from 2.
It has bit of tri-state address pins providing a maximum ofor address. It has bit of tri-state address pins providing a maximum ofor address Dahasheet information. The is specified in compliance More information. It encodes data and address pins into a serial coded waveform suitable.
Charge Injection, 2pC typ. They possess high noise immunity, More information. The input signals in the opposite phase leading to the outputs should not be applied.
Their primary use is where low More dataseet. Features Very high speed: On-chip address and data latches Self-timed. On-chip address and data latches Self-timed More information. History Issue Date Remark 0. They possess high noise More information.